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Low-Temperature H<sub>2</sub>S Sensors Based on Si-Coated SnO<sub>2</sub> Nanowires
Myung Sik Choi, Ali Mirzaei, Jae Hoon Bang, Han Gil Na, Changhyun Jin, Wansik Oum, Seungmin Han, Sang Sub Kim, Hyoun Woo Kim
Korean J. Met. Mater. 2019;57(11):732-740.   Published online 2019 Nov 5
DOI: https://doi.org/10.3365/KJMM.2019.57.11.732

Abstract
To attain high life standards, it is important to develop high-performance non-toxic gas sensors for public safety, environmental pollutant control, industrial processes, etc. Because reports on single element semiconductor-coated semiconducting metal oxides for sensing applications are rare, we synthesized SnO2 nanowires and coated them with a 5 nm-thick or 10..... More

                        
Cleavage Dicing Mechanics in Silicon Wafers
실리콘 웨이퍼의 그리비지 다이싱 역학
Seong-Min Lee, Yeon-Wook Kim
이성민, 김연욱
Korean J. Met. Mater. 2019;57(11):689-694.   Published online 2019 Nov 5
DOI: https://doi.org/10.3365/KJMM.2019.57.11.689

Abstract
This article details how effectively dicing damage of silicon wafers can be mechanically minimized by appropriate laser-induced groove formation prior to wafer separation. Various laser dicing factors, such as the laser-control power, the scan rate and the scan number of the laser beam, were estimated to determine the optimum groove..... More

                        
Influence of the Thickness of TiO<sub>2</sub>/TiO<sub>2-x</sub> Layers on the Behavior of a Memristor Device
TiO2/TiO2-x 박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
Han-Sang Kim, Sung-Jin Kim
김한상, 김성진
Korean J. Met. Mater. 2019;57(2):84-90.   Published online 2019 Feb 5
DOI: https://doi.org/10.3365/KJMM.2019.57.2.84

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

                           Cited By 2
Study of Novel EUV AbsorberNickel & Nickel Oxide
새로운 EUV 흡수체 연구:니켈 & 니켈 산화물
Dong Gon Woo, Jung Hwan Kim, Jung Sik Kim, Seongchul Hong, Jinho Ahn
우동곤, 김정환, 김정식, 홍성철, 안진호
Korean J. Met. Mater. 2017;55(3):198-201.   Published online 2017 Mar 3
DOI: https://doi.org/10.3365/KJMM.2017.55.3.198
Abstract
The shadowing effect is one of the most urgent issues yet to be solved in high-volume manufacturing using extreme ultraviolet lithography (EUVL). Many studies have been conducted to mitigate the unexpected results caused by shadowing effects. The simplest way to mitigate the shadowing effect is to reduce the thickness of... More
         Cited By 1
Electronic Materials
Effect of Sawing Velocity Variation on Chipping Damage of Semiconductor Wafers with Different Thicknesses
다이싱 속도 변화가 두께가 차별화된 반도체 웨이퍼의 칩핑 손상에 미치는 영향
Seong-Min Lee
이성민
Korean J. Met. Mater. 2016;54(8):598-604.   Published online 2016 Aug 5
DOI: https://doi.org/10.3365/KJMM.2016.54.8.598

Abstract
This work details how the sawing velocity influences the chipping damage of semiconductor wafers with different thicknesses during wafer separation. The experimental result shows that at a sawing velocity higher than 60000 rpm, in thinner wafers the magnitude of chipping damage more strongly depends on the revolving velocity of the..... More

         Cited By 3
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