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Korean Journal of Metals and Materials > Volume 55(3); 2017 > Article
Korean Journal of Metals and Materials 2017;55(3): 209-212. doi: https://doi.org/10.3365/KJMM.2017.55.3.209
Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing
Hyun-Joo Moon, Daeil Kim
School of Materials Science and Engineering, University of Ulsan, Ulsan 44610, Republic of Korea
Correspondence  Daeil Kim ,Tel: +82-52-259-2243, Email: dkim84@ulsan.ac.kr
Received: 7 June 2016;  Accepted: 30 August 2016.  Published online: 3 March 2017.
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H2/N2 gas flow of 6/6 sccm, to investigate the effects of annealing temperature on their electrical, and optical properties. After annealing at a temperature of 300 ℃, the optical transmittance in the visible wavelength region increased from 82.0 to 83.8% and their electrical resistivity decreased to as low as 5.38×10-5 Ω cm at an annealing temperature of 300 ℃. The figure of merit revealed that ZTO/Ag/ZTO films annealed at 300 ℃ have higher optical and electrical performance than the other TCO films prepared under different conditions.
Keywords: thin films, sputtering, optical properties, AFM, figure of merit.
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