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Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System
Hee-Young Shin, Tae-Ho Kim, Jun-Woo Park, Hyun-Chul Sohn
Korean J. Met. Mater. 2019;57(7):462-467.   Published online 2019 Jun 5
DOI: https://doi.org/10.3365/KJMM.2019.57.7.462

Abstract
In this work, the angular distribution of the sputtered Cu flux in a long throw sputtering (LTS) system is extracted from the comparison of experimentally-measured profiles of deposited films with simulated profiles of films in overhang contact structure. And effects of the sputtering process parameters such as Ar pressure during..... More

                        
Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO<sub>2-x</sub>-based Thin-Film Transistors Deposited by RF Magnetron Sputtering
RF 마그네트론 스퍼터링으로 증착한 산소 결핍 구조 TiO2-x 박막 트랜지스터에 미치는 급속 열처리 온도의 영향
Han-Sang Kim, Jae-Yun Lee, Sung-Jin Kim
김한상, 이재윤, 김성진
Korean J. Met. Mater. 2019;57(7):438-446.   Published online 2019 Jun 5
DOI: https://doi.org/10.3365/KJMM.2019.57.7.438

Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More

                        
Influence of the Thickness of TiO<sub>2</sub>/TiO<sub>2-x</sub> Layers on the Behavior of a Memristor Device
TiO2/TiO2-x 박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
Han-Sang Kim, Sung-Jin Kim
김한상, 김성진
Korean J. Met. Mater. 2019;57(2):84-90.   Published online 2019 Feb 5
DOI: https://doi.org/10.3365/KJMM.2019.57.2.84

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

                           Cited By 1
Electrical and Optical Investigation of the Growth Behavior of Au Nanoparticles Fabricated on Various Matrix Materials by the Alternating Sputtering Method
교번스퍼터링법에 의해 다양한 기지상 재료위에 형성된 Au 나노입자의 성장거동에 대한 전기, 광학적 분석
Bum-Joon Kim, Hyun Chul Kim, Jong-Geon Park, Kyeong-Seok Lee
김범준, 김현철, 박종건, 이경석
Korean J. Met. Mater. 2017;55(10):739-744.   Published online 2017 Sep 28
DOI: https://doi.org/10.3365/KJMM.2017.55.10.739

Abstract
Nanocomposite films, which are comprised of metal nanoparticles dispersed in a matrix layer, have attracted great interest due to their unique electrical and optical properties, which are mainly due to the excitation of localized surface plasmons. In this study, we employed an alternating sputtering method to fabricate such nanocomposite films...... More

      
Near Infrared Reflecting Properties of TiO<sub>2</sub>/Ag/TiO<sub>2</sub> Multilayers Prepared by DC/RF Magnetron Sputtering
Sung Han Kim, Seo Han Kim, Pung Keun Song
Korean J. Met. Mater. 2017;55(8):581-586.   Published online 2017 Aug 1
DOI: https://doi.org/10.3365/KJMM.2017.55.8.581

Abstract
The near-infrared (NIR) reflecting properties of TiO2 /Ag /TiO2 (TAT) multilayers deposited using DC/RF magnetron sputtering were investigated. For high transmittance and reflectance in the visible and NIR ranges, respectively, the thickness of each layer was theoretically optimized by the index matching method. As the Ag layer thickness increased, the..... More

      
Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing
Hyun-Joo Moon, Daeil Kim
Korean J. Met. Mater. 2017;55(3):209-212.   Published online 2017 Mar 3
DOI: https://doi.org/10.3365/KJMM.2017.55.3.209

Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H2/N2 gas flow of 6/6 sccm, to investigate the effects of annealing temperature..... More

      
Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films
Sung-Bo Heo, Hyun-Joo Moon, Jeong-Hyeon Oh, Young-Hwan Song, Tae-Young Eom, Jun-Ho Kim, Daeil Kim
Korean J. Met. Mater. 2016;54(10):775-779.   Published online 2016 Oct 5
DOI: https://doi.org/10.3365/KJMM.2016.54.10.775

Abstract
Ti-doped In2O3 (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C..... More

      
Electronic Materials
Enhanced Optical and Electrical Properties of TiO<sub>2</sub> Buffered IGZO/TiO<sub>2</sub> Bi-Layered Films
Hyun-Joo Moon, Daeil Kim
Korean J. Met. Mater. 2016;54(8):605-608.   Published online 2016 Aug 5
DOI: https://doi.org/10.3365/KJMM.2016.54.8.605

Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO2-deposited glass substrate to determine the effect of the thickness of a thin TiO2 buffer layer on the structural, optical, and electrical..... More

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