Abstract
ZnO 50 nm/Ag 10 nm/SnO₂ 50 nm (ZAS) tri-layer films were deposited on a glass substrate by RF and DC magnetron sputtering and then underwent rapid thermal annealing in a low vacuum of 1×10^-3 Torr to investigate the effects of post-deposition annealing on the optical and electrical properties of the..... More

Abstract
ZnO/Ag/SnO2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO2 50 nm films..... More

Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H₂/N₂ gas flow of 6/6 sccm, to investigate the effects of annealing temperature..... More

Abstract
Ti-doped In₂O₃ (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C..... More

Electronic Materials

Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO₂-deposited glass substrate to determine the effect of the thickness of a thin TiO₂ buffer layer on the structural, optical, and electrical..... More