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Korean J. Met. Mater.
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Korean Journal of Metals and Materials
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단일벽 탄소나노튜브와 다중벽 탄소나노튜브 사용에 따른 고분자 복합체의 기계적, 전기적 물성
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강병호, 허오녕, 홍순국, 박성훈
Korean J. Met. Mater.
2022;60(9):694-700. Published online 2022 Aug 30
DOI:
https://doi.org/10.3365/KJMM.2022.60.9.694
Abstract
To manufacture composites with required properties, it is extremely important to select an appropriate filler. Carbon-based nano materials such as carbon black, graphene and carbon nanotube (CNT) have been extensively investigated as reinforcing and conducting fillers. Because of their high aspect ratio coupled with superior physical properties, 1-dimensional CNTs are.....
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Cited By 1
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ZnO/Ag/SnO
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적층박막의 두께 변화에 따른 전기적, 광학적 특성 연구
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김유성, 최진영, 박윤제, 최수현, 공영민, 김대일
Korean J. Met. Mater.
2019;57(5):324-327. Published online 2019 May 5
DOI:
https://doi.org/10.3365/KJMM.2019.57.5.324
Abstract
ZnO/Ag/SnO2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO2 50 nm films.....
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Cited By 7
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Korean J. Met. Mater.
2016;54(10):780-786. Published online 2016 Oct 5
DOI:
https://doi.org/10.3365/KJMM.2016.54.10.780
Abstract
Si/SiO
x
composite anodes were prepared using a facile solution reaction-based method. Their initial capacity was significantly improved to 1.3 times that of SiO
x
by incorporating 3 wt% silicon nanoparticles into the SiO
x
. The capacity retention of the Si/SiO
x
anodes after 50 charge-discharge cycles was significantly enhanced, to 99%, compared with.....
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Cited By 5
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Korean J. Met. Mater.
2016;54(10):775-779. Published online 2016 Oct 5
DOI:
https://doi.org/10.3365/KJMM.2016.54.10.775
Abstract
Ti-doped In
2
O
3
(TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C.....
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Cited By 1
Electronic Materials
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Korean J. Met. Mater.
2016;54(8):605-608. Published online 2016 Aug 5
DOI:
https://doi.org/10.3365/KJMM.2016.54.8.605
Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO
2
-deposited glass substrate to determine the effect of the thickness of a thin TiO
2
buffer layer on the structural, optical, and electrical.....
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Cited By 1
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