1. INTRODUCTION
Hydrogen energy has emerged as a highly promising alternative to fossil fuels, and
an efficient way to address the environmental crisis and rising energy demand, particularly
due to its advantages in storage and transportation. Among the various hydrogen-production
technologies, photoelectrochemical (PEC) water splitting, which utilizes sunlight
to generate hydrogen, has attracted significant research attention as a sustainable
and environmentally friendly method[1,
2]. Conventional PEC materials, such as TiO2, Fe2O3, ZnO, and WO3, have been extensively studied due to their excellent stability[3-6]. However, their wide bandgaps limit visible-light absorption. Although strategies
such as doping and heterostructure formation have been explored to overcome this limitation,
improvements in PEC efficiency remain limited[7-10]. To fully leverage solar energy, semiconductor materials with an appropriate bandgap
for visible-light absorption are essential. Two-dimensional (2D) transition metal
dichalcogenides (TMDs) have attracted considerable attention as next-generation functional
materials for applications including solar cells and PEC photoelectrodes because of
their favorable optoelectronic properties, high catalytic activity, and suitable bandgap
(Eg)[10-14]. In particular, MoS2, a prototypical 2D TMD, has been reported as a viable PEC electrode material due
to its high carrier mobility and favorable Eg for visible-light-driven hydrogen generation[15,
16]. The PEC performance of MoS2 can be further enhanced by heterostructure engineering, to facilitate photogenerated
electron–hole separation and transfer. In this regard, MoS2/graphene heterostructures exhibit an efficient 2D/2D synergistic effect.
Graphene is particularly attractive as a conductive support layer due to its exceptional
electron mobility (~2 × 104 cm2V-1s-1) and its compatibility for forming efficient heterojunctions with 2D TMDs[16,
17]. However, most MoS2/graphene heterostructures are synthesized via wet chemical or mechanical exfoliation
methods, which often result in aggregation. This aggregation not only inhibits the
ideal formation of nanostructures on graphene but also diminishes electron-transfer
properties and catalytic active-site availability due to strong van der Waals and
π–π interactions[18,
19]. In contrast, as a promising alternative, vacuum-based fabrication techniques for
MoS2/graphene heterostructures enable precise control over MoS2 morphology, facilitating the design of efficient PEC electrodes. Additionally, control
of MoS2 morphology and thickness is critical, as both parameters directly influence its surface
area and charge transport characteristics. While charge transport in the basal planes
of MoS2 is relatively poor, the edge sites exhibit superior catalytic activity and charge
carrier dynamics[15]. Therefore, fabricating nanostructured MoS2 with maximized edge-site exposure is desirable for efficient PEC performance[12,
20].
In this study, we demonstrate the morphology-controlled growth of MoS2 on graphene substrates via metal–organic chemical vapor deposition (MOCVD), using
deposition time as the primary tuning parameter. The synthesis method preserved the
underlying graphene in the resulting MoS2/graphene heterostructures, ranging from thin films to vertically aligned nanosheets,
highlighting the capability of this approach for constructing tunable hybrid nanostructures.
Comprehensive analyses of MoS2 morphology and thickness were performed, and the optimized MoS2/graphene heterostructure for PEC water-splitting applications was identified.
3. RESULTS AND DISCUSSION
Figure 1(a) and 1(b) show cross-sectional SEM images of MoS2 grown for 10 min on ITO and graphene substrates, respectively, illustrating the morphological
characteristics of the nanosheet structures. The insets provide top-view SEM images
for additional perspective. As shown in Figure 1(a), MoS2 grown at 290 °C for 10 min (hereafter referred to as pristine MoS2) exhibits vertically aligned, densely packed nanosheets with sharp edges. The average
size of the nanosheets is approximately 200–240 nm. Similarly, MoS2 grown on graphene (Figure 1(b)) forms vertically oriented nanosheets that uniformly cover the substrate, demonstrating
morphological features comparable to those of pristine MoS2.
Figure 1(c) and 1(d) present the Raman spectra of the graphene, pristine MoS2, and the MoS2/graphene heterostructure. The pristine MoS2 shows two prominent peaks at 381.2 and 404.7 cm–1, corresponding to the in-plane E1
2g and out-of-plane A1g vibrational modes of 2H-MoS2, respectively[16,
22]. The MoS2/graphene heterostructure displays similar E1
2g and A1g peaks, while no noticeable Raman features are observed from the graphene substrate
in this spectral region (300–500 cm–1). However, within the Raman range of 1200–2800 cm–1, the presence of characteristic G and 2D bands (Figure 1(d)) confirms that the graphene layer remained following the MOCVD growth of MoS2
[23]. This result indicates that the proposed synthesis method is suitable for fabricating
high-quality MoS2/graphene heterostructures while preserving the underlying graphene.
X-ray photoelectron spectroscopy (XPS) was employed to investigate the chemical bonding
states of the sample. Figure 1(e) and (f) present the deconvoluted XPS core-level spectra of Mo 3d and S 2p obtained from the
MoS2/graphene sample. All spectra were fitted using a Gaussian–Lorentzian function with
a Shirley background, enabling detailed analysis of the characteristic peaks. As shown
in Figure 1(e), the Mo 3d core-level spectrum of the MoS2/graphene sample exhibits two prominent peaks at 229.5 and 232.6 eV, which are assigned
to the Mo 3d5/2 and 3d3/2 states of the 2H phase, respectively[12]. In the same spectrum, the S 2s peak appears at 226.7 eV, while a weak peak at 235.9
eV corresponds to Mo6+ species, indicating slight surface oxidation. This oxidation is likely caused by
unavoidable exposure to ambient air during sample transfer for analysis[16]. Furthermore, the S 2p core-level spectrum shown in Figure 1(f) displays two characteristic peaks at 162.4 and 163.6 eV, which are attributed to
the S 2p3/2 and S 2p1/2 states of MoS2, respectively. The binding energies of the Mo 3d, S 2s, and S 2p peaks are consistent
with previously reported values for 2H-MoS2
[12], further confirming the successful formation of MoS2 on graphene, in agreement with the Raman analysis.
Fig. 1. SEM images of (a) pristine MoS2 and (b) MoS2/graphene heterostructure. Raman spectra of various samples (graphene, pristine MoS2, and MoS2/graphene) in the (c) 300–500 cm–1 and (d) 1200–2800 cm–1 region. XPS spectra of (e) Mo 3d, and (f) S 2p core levels for MoS2/graphene sample
Figure 2(a)–(d) presents the morphological characteristics of the MoS2/graphene heterostructures with different MoS2 growth times (2, 5, 10, and 30 min, hereafter referred to as MG-2m, MG-5m, MG-10m,
and MG-30m, respectively). The insets show corresponding top-view SEM images. At a
growth time of 2 min (MG-2m), a uniform MoS2 thin film with a thickness of approximately 80 nm was formed, as shown in Figure 2(a). In addition, nanoparticles with diameters ranging from ~90 to 110 nm could be partially
observed (inset of Figure 2(a)). When the growth time increased to 5 min (MG-5m), the MoS2 morphology changed to vertically aligned nanosheets with sizes of approximately 150–180
nm (Figure 2(b)). When growth times were further increased to 10 min and 30 min (MG-10m and MG-30m),
the nanosheet structures continued to grow, reaching average sizes of approximately
230–270 nm and 880–960 nm, as shown in Figure 2(c) and 2(d), respectively. Figure 2(e) displays a TEM image of the MG-10m sample, clearly showing uniformly distributed
vertical nanosheets. A high-resolution TEM (HRTEM) image taken from the yellow-boxed
region in Figure 2(e) is shown in Figure 2(f), revealing a lattice spacing of approximately 0.63 nm, which corresponds to the (002)
plane of the 2H-phase MoS2
[23].
Fig. 2. (a) SEM images of MoS2 synthesized on graphene substrate at various growth times: (a) MG-2m at 2 min, (b)
MG-5m at 5 min, (c) MG-10m at 10 min, and (d) MG-30m at 30 min. (e) Low-magnification
TEM image of MG-10m and (f) HRTEM image.
To investigate the optical properties of the samples, a series of systematic analyses,
including UV–Vis absorbance, PL, and TRPL, were carried out. Figure 3(a) presents the UV–Vis absorption spectra of the graphene, pristine MoS2, and the MoS2/graphene heterostructure (MG-10m). Both pristine MoS2 and MG-10m exhibit two characteristic absorbance peaks at approximately 604 nm and
661 nm, corresponding to direct bandgap transitions at the K point in the Brillouin
zone of MoS2
[24,
25]. The slight difference in absorbance between the two samples is attributed to the
weak absorbance of the underlying graphene layer. To gain further insights into the
photoexcited carrier dynamics, PL and TRPL measurements were performed on pristine
MoS2 and the MoS2/graphene heterostructures (MG-2m, MG-5m, MG-10m, and MG-30m). As shown in Figure 3(b), the pristine MoS2 sample exhibits a strong PL emission peak centered at approximately 675 nm, characteristic
of direct bandgap transitions, in agreement with previous reports[23]. For the MoS2/graphene heterostructures with vertically aligned nanosheet structures (MG-5m, MG-10m,
and MG-30m), PL peaks were observed at approximately 682 nm. In contrast, the MG-2m
sample, which has a thin-film structure, exhibited a broader PL emission in the 700–750
nm range, likely originating from an indirect bandgap transition[26,
27]. Notably, all of the MoS2/graphene heterostructures exhibited significantly lower PL intensities compared to
pristine MoS2, indicating recombination of photoexcited electron–hole pairs is being suppressed[23,
26]. This decreased PL intensity is attributed to the MoS2/graphene heterojunction effect, which facilitates efficient charge separation and
carrier transport across the MoS2/graphene interface, potentially enhancing PEC performance[26,
28]. The TRPL decay profiles of pristine MoS2 and the MoS2/graphene heterostructures are presented in Figure 3(c), with the extracted carrier lifetimes summarized in the inset table. Pristine MoS2 exhibited an average carrier lifetime of 11.7 ns, whereas the MoS2/graphene samples demonstrated shorter lifetimes (MG-2m: 10.0 ns, MG-5m: 9.2 ns, MG-10m:
8.9 ns, and MG-30m: 10.1 ns). These shortened lifetimes can be attributed to the MoS2/graphene heterostructure, which facilitates the efficient separation and transport
of photogenerated carriers to the semiconductor–liquid interface. In particular, the
vertically aligned nanosheet architecture further enhances carrier extraction by providing
effective charge transport pathways through their highly conductive edges[12,
26]. Meanwhile, MG-30m showed a slight increase in carrier lifetime compared to MG-10m,
which is attributed to increased recombination resulting from the limited diffusion
length of photogenerated carriers in the larger nanosheet structures[29]. This trend is consistent with the PL results.
Fig. 3. (a) UV–Vis absorbance spectra of graphene, pristine MoS2, and the MoS2/graphene heterostructure (MG-10m). (b) PL spectra and (c) TRPL results of MoS2, MG-2m, MG-5m, MG-10m, and MG-30m. The inset table in (c) lists the photogenerated
carrier lifetimes based on corresponding TRPL measurements.
The PEC activities of pristine MoS2 and MoS2/graphene (MG-10m) heterostructures were evaluated by recording linear sweep voltammograms
under dark conditions and simulated AM 1.5G illumination. As shown in Figure 4(a), MG-10m exhibited an enhanced photocurrent density (2.44 mA cm–2 at 0.8 V) compared to pristine MoS2 (1.65 mA cm–2 at 0.8 V) across the entire potential range, while their dark currents (dotted lines)
remained comparable. The onset potential, defined as the potential at the intersection
of the dark current and the tangent to the region of photocurrent slope, was approximately
0.49 V for pristine MoS2. In contrast, MG-10m showed a cathodic shift in onset potential to approximately
0.44 V, indicating improved catalytic activity. The enhanced photocurrent and reduced
onset potential observed in MG-10m are attributed to more effective separation and
the transfer of photogenerated carriers at the MoS2/graphene heterojunction[23,
28], which was further corroborated by EIS. Figure 4(b) presents the EIS Nyquist plots of pristine MoS2 and MG-10m under illumination. These Nyquist plots were fitted using a simplified
Randles circuit, as shown in the inset of Figure 4(b), which consists of solution resistance (Rs), charge transfer resistance (Rct), and a constant phase element (C). According to prior studies, a smaller semicircle
diameter in Nyquist plots corresponds to a lower charge transfer resistance (Rct), indicating more efficient carrier transport[30-32]. Consistent with this, MG-10m displayed a smaller semicircle than pristine MoS2, confirming the enhanced separation and transport of photogenerated electron–hole
pairs across the heterojunction.
Furthermore, the PEC performance was significantly affected by the morphology and
nanosheet size of MoS2 grown via the morphology-controlled MOCVD method. Figure 4(c) displays the photocurrent (solid lines) and dark current (dotted lines) densities
of MoS2/graphene heterostructures synthesized at various growth times (MG-2m, MG-5m, MG-10m,
and MG-30m). The MG-5m sample showed a notable increase in photocurrent compared to
MG-2m, and MG-10m exhibited the highest PEC performance. However, when the growth
time was extended to 30 min (MG-30m), the PEC performance did not improve, and instead
deteriorated compared to MG-10m. This tendency may be due to the following factors.
(i) Small-sized particles and nanosheets showed relatively unsatisfactory PEC performances
because their specific surface areas were not significantly improved. (ii) Large and
excessively packed vertical nanosheets can limit the diffusion length of the carriers
and reduce active site exposure owing to their high overlap with each other, which
leads to the degradation in PEC reactivity[12,
33]. Previous studies have shown that a significant portion of photogenerated charge
carriers generated in the upper regions of MoS2 nanosheets beyond the diffusion length contributes minimally to the PEC reaction[29], which accounts for the low photocurrent observed in MG-30m with excessively large
nanosheets. These findings indicate why MG-10m, which features vertically aligned
nanosheets of optimal size and density, achieved the best PEC performance. Figure 4(d) presents the EIS Nyquist plots for all of the MoS2/graphene heterostructures. MG-2m exhibited the largest semicircle diameter due to
its limited surface area and poor PEC activity. Conversely, MG-10m showed the smallest
semicircle, consistent with its superior PEC photocurrent performance, confirming
efficient carrier separation and transport facilitated by its optimized nanostructure.
Fig. 4. (a) Photocurrent and dark density-potential curves of pristine MoS2 and MG-10m PEC cells. (b) EIS Nyquist plots of MoS2 and MG-10m under illumination. (c) Current density-potential curves and (d) EIS Nyquist
plots of PEC cells with various working electrodes (MG-2m, MG-5m, MG-10m, and MG-30m).