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Utilizing Dip-Coating to Fabricate Gate Dielectric and Semiconductor for Thin-Film Transistors
딥코팅 방법을 활용한 게이트 산화물 유전체 및 반도체 박막의 제조 및 박막트랜지스터 응용
Yongwan Kim, Young-Geun Ha
김용완, 하영근
Korean J. Met. Mater. 2023;61(8):581-588.   Published online 2023 Jul 20
DOI: https://doi.org/10.3365/KJMM.2023.61.8.581

Abstract
The potential applications of advanced electronic materials in large-area, printable, and flexible electronics have generated significant interest. However, creating high-performance, low-voltage thin-film transistors (TFTs) for these applications remains difficult due to a lack of advanced gate dielectric and semiconductor materials that meet both ease-of-fabrication requirements and high electrical performance. In..... More

                
Fabrication of Self-Healable, Robust, and Superhydrophobic Nanocomposite Films
Siwoo Park, Young-Geun Ha
Korean J. Met. Mater. 2023;61(1):54-59.   Published online 2022 Dec 28
DOI: https://doi.org/10.3365/KJMM.2023.61.1.54

Abstract
Despite the recent advances in nature-inspired superhydrophobic surfaces with multifunctional properties such as self-healing, self-cleaning, antibacterial material, anti-biofouling, and oil-water separation in various industrial applications, there have been very few reports of robust superhydrophobic surfaces fabricated via a low-cost method. Herein, we report a rationally designed, self-healable, robust, and superhydrophobic..... More

                   Crossref 1
Organic-Inorganic Hybrid Gate Dielectrics Using Self-Assembled Multilayers For Low-Voltage Operating Thin-Film Transistors
Yong-Wan Kim, Young-Geun Ha
Korean J. Met. Mater. 2022;60(3):220-226.   Published online 2022 Feb 8
DOI: https://doi.org/10.3365/KJMM.2022.60.3.220

Abstract
Advanced electronic materials have attracted great interest for their potential use in flexible, large-area, and printable electronic applications. However, fabricating high-performance low-voltage thin-film transistors (TFTs) for those applications with these advanced semiconductors is still challenging because of a lack of dielectric materials which satisfy both the required electrical and physical..... More

                
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