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Effect of Zn Doping on an Inkjet-Printed Metal Oxide Thin-Film Transistor at Low Temperature of 200 <sup>o</sup>C
저온 200 oC에서 잉크젯인쇄에 의한 금속산화물 박막트랜지스터의 아연도핑 효과
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2019;57(3):170-175.   Published online 2019 Feb 8
DOI: https://doi.org/10.3365/KJMM.2019.57.3.170

Abstract
Amorphous oxide semiconductors have attracted much attention due to their good electrical properties with wide band gaps and low cost process, which are used as backplanes for displays. However, there are some issues regarding low temperature process with high mobility and printing capability. The inkjet method is an attractive technology..... More

                        
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