| Title |
Thermoelectric Properties of Hot - Pressed p - type ( Sb2Te3 ) 0.70 ( Bi2Te3 ) 0.25 (Sb2Se3 )0.05 Pseudo - ternary Materials |
| Authors |
장경욱(Kyung Wook Jang) ; 이동희(Dong Hi Lee) |
| Abstract |
The p-type thermoelectrics of (Sb₂Te₃)_(0.70)(Bi₂Te₃)_(0.25)(Sb₂Se₃)_(0.05) doped with various amounts of Te were prepared by pressure-assisted resistance/spark sintering technique. Property variations of the materials were investigated as a function of variables, such as powder size and amount of the dopant. The sintering process caused anisotropy in electrical and thermal conductivities as well as in microstructure of the materials. Enhanced values of figure of merit(F.O.M) were obtained thanks to the anisotropy; ie, the material doped with 3- and 4-wt% of Te showed F. O. M, of 2.2×10^(-3)K^(-1) and 2.0×10^(-3)K^(-1) at room temperature, respectively. These values are about 70% of that reported for unidirectionally grown crystal. |