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Korean Journal of Metals and Materials > Volume 55(2); 2017 > Article
Korean Journal of Metals and Materials 2017;55(2): 139-143. doi: https://doi.org/10.3365/KJMM.2017.55.2.139
극자외선 노광공정에서의 사이드 로브 세기와 포톤 샷 노이즈 효과가 컨택 홀 missing 현상에 미치는 영향
김정식1, 홍성철2, 장용주1, 안진호1,2,3,*
1한양대학교 나노반도체공학과
2한양대학교 신소재공학과
3한양대학교 나노과학기술연구소
Effect of Side Lobe Intensity and Photon Shot Noise Effect on the Missing Hole Phenomenon in Extreme Ultraviolet Lithography
Jung Sik Kim1, Seongchul Hong2, Yong Ju Jang1, Jinho Ahn1,2,3,*
1Department of Nanoscale Semiconductor Engineering, Hanyang University, Seoul 04763, Republic of Korea
2Department of Materials Science and Engineering, Hanyang University, Seoul 04763, Republic of Korea
3Institute of Nano Science and Technology, Hanyang University, Seoul 04763, Republic of Korea
Correspondence  Jinho Ahn ,Tel: +82-2-2220-0407, Email: jhahn@hanyang.ac.kr
Received: 24 August 2016;  Accepted: 25 August 2016.  Published online: 2 February 2017.
ABSTRACT
The missing hole phenomenon in a wafer pattern is a critical issue in extreme ultraviolet lithography. It occurs randomly, even when the process conditions are consistent. The main reason for this phenomenon is thought to be the photon shot noise effect, which is a random reaction between photons and photoresist particles. We speculate that side lobe intensity can be another reason, since the missing hole is affected by the light distribution of the main hole pattern. To confirm the effect of side lobe intensity and photon shot noise on the missing hole phenomenon, we used an attenuated phase shift mask (PSM), whose reflectivity can be changed without varying the total absorber stack thickness. The results show that the photon shot noise effect and the side lobe intensity are both affected by the reflectivity of the PSM and are the critical factors for the missing holes.
Keywords: EUV phase shift mask, lithography simulation, missing hole, photon shot noise effect, side lobe intensity
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