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Hee-Young Shin, Tae-Ho Kim, Jun-Woo Park, and Hyun-Chul Sohn
황보승1, 이홍범1, 송영범2, 함진희2, 김홍규2, 서동우1
1포항공과대학교 철강대학원
Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System
Seung Hwangbo1, Hong-Bum Lee1, Young-Beum Song2, Jinhee Ham2, Hong-Kyu Kim2, Dong-Woo Suh1
1Graduate Institute of Ferrous Technology, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
2Agency for Defense Development, Daejeon 34186, Republic of Korea
Correspondence  Dong-Woo Suh ,Tel: +82-54-279-9030, Email: dongwoo1@postech.ac.kr
Received: 27 February 2019;  Accepted: 21 May 2019.  Published online: 5 June 2019.
In this work, the angular distribution of the sputtered Cu flux in a long throw sputtering (LTS) system is extracted from the comparison of experimentally-measured profiles of deposited films with simulated profiles of films in overhang contact structure. And effects of the sputtering process parameters such as Ar pressure during sputtering, RF power on substrates, and DC power on Cu target are investigated for a DC magnetron sputtering system with LTS. The bottom step coverage in contact is enhanced with decreasing operating pressure and is increased with increasing substrate RF power up to 200 W. However, the bottom step-coverage was reduced with substrate RF power above 400 W, possibly due to the re-sputtering effect of the deposited Cu films. DC power on Cu target does not affect the angular distribution of Cu atoms while the overall deposition rate is increased. Based on the estimated angular distribution of sputtered Cu flux, the profile of Cu film is deposition on a deep via of aspect ratio 10 and compared to the simulation of the film profile, that shows a good agreement.
Keywords: DC magnetron sputtering, flux distribution, step coverage, long throw sputter, simulation
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