| Home | E-Submission/Review | Sitemap | Editorial Office |  
Korean Journal of Metals and Materials > Epub ahead of print
전기수력학젯 분산 기술을 이용한 아연-주석 산화물 박막트랜지스터의 인듐 도핑 효과
Received: 22 January 2019;  Accepted: 5 March 2019.  Published online: 8 March 2019.
The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV, a syringe speed of 0.032 μm/s, spraying time of 10 s, and a substrate temperature of 50 oC. Indium doping increased metal-oxide formation in the thin-film, as confirmed by XPS. In addition, improved TFT electrical properties were obtained compared with non-doped TFTs by using EHD jet spray. A 0.1 M In-doped ZTO TFT showed a mobility of 7.40 cm2/V s, a threshold voltage of -3.4 V, an on-to-off current ratio of 1.87 × 106, and a sub-threshold slope of 1.2 V/dec. Improved hysteresis behavior of the TFT was also achieved by indium doping.
Keywords: EHD jet, spray, ZTO TFT, Indium doping
PDF Links  PDF Links
Full text via DOI  Full text via DOI
Download Citation  Download Citation
Related article
Editorial Office
The Korean Institute of Metals and Materials
6th Fl., Seocho-daero 56-gil 38, Seocho-gu, Seoul 06633, Korea
TEL: +82-70-4266-1646   FAX: +82-2-557-1080   E-mail: metal@kim.or.kr
About |  Browse Articles |  Current Issue |  For Authors and Reviewers
Copyright © The Korean Institute of Metals and Materials. All rights reserved.                 Developed in M2Community