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Korean Journal of Metals and Materials > Epub ahead of print
최운섭
저온 200 oC에서 잉크젯인쇄에 의한 금속산화물 박막트랜지스터의 아연도핑 효과
Received: 19 November 2018;  Accepted: 26 January 2019.  Published online: 8 February 2019.
ABSTRACT
Amorphous oxide semiconductors have attracted much attention due to their good electrical properties with wide band gaps and low cost process, which are capable of backplane for displays. However, there are some issues regarding low temperature process with high mobility and printing capability. Inkjet is an attractive technology for high resolution printing with drop-on-demand patterning. Doping is a useful technology to control of the semiconductor properties. We prepared zinc-doped metal-oxide semiconductor by inkjet-printing technique at low temperature of 200 oC. The In2O3 formulation with various doping concentration of zinc during inkjet process was thoroughly investigated. In the case of In2O3 TFT, the electrical properties were influenced by the concentration of zinc. The lower zinc concentration shows the better TFT electrical properties due to the suitable suppression of carriers. The threshold voltage of metal oxide TFT with zinc doping concentrations was negatively shifted. The 0.025M Zn doped In2O3 TFT shows the best performance which is similar to In2O3 TFT, and shows more positively shifted threshold voltage under hysteresis and positive bias stress. When doping concentration of zinc was 0.025 M, a mobility of 1.80 cm2/ Vs, an on-to-off current ratio of 1.49 × 107, a threshold voltage of -3.26 V and a subthreshold slope of 0.3 V dec-1.
Keywords: inkjet print, metal-oxide, TFT, doping effect
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