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Korean Journal of Metals and Materials > Volume 55(8); 2017 > Article
Korean Journal of Metals and Materials 2017;55(8): 572-575. doi: https://doi.org/10.3365/KJMM.2017.55.8.572
스핀코팅과 자외선 조사의 동시 적용을 기반한 용액 공정형 Indium Zinc 산화물 트랜지스터 연구
선비, 김성진
충북대학교 전자정보대학
Study of Solution-Processed Indium Zinc Oxide TFTs Made by Simultaneous Spin Coating and Ultraviolet Light Irradiation
Fei Shan, Sung-Jin Kim
College of Electrica and Computer Engineering, Chungbuk National University, Cheongju 28644, Republic of Korea
Correspondence  Sung-Jin Kim ,Tel: +82-43-261-2451, Email: ksj@cbnu.ac.kr
Received: 18 October 2016;  Accepted: 13 April 2017.  Published online: 1 August 2017.
ABSTRACT
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for 90 sec had a field-effect mobility of 5.6 cm2/Vs, a threshold voltage of -0.13 V, a subthreshold swing of 0.64 V/decade, and an on/off current ratio of 1.7 × 106 with a width/length of 2000 μm/200 μm.
Keywords: thin films, sol-gel, surface, electrical, indium-zinc oxide TFTs
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