| 다이싱 속도 변화가 두께가 차별화된 반도체 웨이퍼의 칩핑 손상에 미치는 영향 |
| 이성민 |
| 인천대학교 신소재공학과 |
| Effect of Sawing Velocity Variation on Chipping Damage of Semiconductor Wafers with Different Thicknesses |
| Seong-Min Lee |
| Department of Materials Science & Engineering, Incheon National University, Incheon 22012, Republic of Korea |
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Received: 16 November 2015; Accepted: 8 March 2016. Published online: 5 August 2016. |
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| ABSTRACT |
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This work details how the sawing velocity influences the chipping damage of semiconductor wafers with different thicknesses during wafer separation. The experimental result shows that at a sawing velocity higher than 60000 rpm, in thinner wafers the magnitude of chipping damage more strongly depends on the revolving velocity of the saw blade. It is also shown that the aspect ratio of the sawing-induced groove formed in a wafer is a key factor in determining the dependence of the chipping damage magnitude on wafer thickness. That is, at a sawing velocity higher than 60000 rpm, the saw blade thickness should be thin enough to allow the sawing-induced scribe (in the shape of a trench) in the wafer to have an aspect ratio larger than 2. Consequently, in order to prevent degradation in device reliability due to the mechanical dicing of a semiconductor wafer thinner than 3T (approximately 45 um), the sawing velocity or saw blade thickness should be reduced. |
| Keywords:
semiconductor, silicon, chip, fracture, reliability |
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