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Korean Journal of Metals and Materials > Volume 54(8); 2016 > Article
Korean Journal of Metals and Materials 2016;54(8): 598-604. doi: https://doi.org/10.3365/KJMM.2016.54.8.598
다이싱 속도 변화가 두께가 차별화된 반도체 웨이퍼의 칩핑 손상에 미치는 영향
이성민
인천대학교 신소재공학과
Effect of Sawing Velocity Variation on Chipping Damage of Semiconductor Wafers with Different Thicknesses
Seong-Min Lee
Department of Materials Science & Engineering, Incheon National University, Incheon 22012, Republic of Korea
Correspondence  Seong-Min Lee ,Tel: +82-32-770-8276, Email: smlee@inu.ac.kr
Received: 16 November 2015;  Accepted: 8 March 2016.  Published online: 5 August 2016.
ABSTRACT
This work details how the sawing velocity influences the chipping damage of semiconductor wafers with different thicknesses during wafer separation. The experimental result shows that at a sawing velocity higher than 60000 rpm, in thinner wafers the magnitude of chipping damage more strongly depends on the revolving velocity of the saw blade. It is also shown that the aspect ratio of the sawing-induced groove formed in a wafer is a key factor in determining the dependence of the chipping damage magnitude on wafer thickness. That is, at a sawing velocity higher than 60000 rpm, the saw blade thickness should be thin enough to allow the sawing-induced scribe (in the shape of a trench) in the wafer to have an aspect ratio larger than 2. Consequently, in order to prevent degradation in device reliability due to the mechanical dicing of a semiconductor wafer thinner than 3T (approximately 45 um), the sawing velocity or saw blade thickness should be reduced.
Keywords: semiconductor, silicon, chip, fracture, reliability
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