 |
|
Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing
Jae-Yun Lee, Anvar Tukhtaev, Suchang Yoo, Yong-Hwan Kim, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
Korean J. Met. Mater.. 2022;60(8):557-563. Published online 2022 Jul 12 DOI: https://doi.org/10.3365/KJMM.2022.60.8.557
|
|
Citations to this article as recorded by
 Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing
Xiaohui Zhang, Yaping Li, Yanwei Li, Xinwang Xie, Longhai Yin
Micromachines.2024; 15(2): 225. CrossRef Solution-processed IGZO field-effect transistors with a three-step laser annealing process
Jiachen Bao, Luying Huang, Yan Liu, Fenghua Liu, Hangxing Xie, Weiping Wu
Journal of Materials Science: Materials in Electro.2024;[Epub] CrossRef
|