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Influence of the Thickness of TiO2/TiO2-x Layers on the Behavior of a Memristor Device
TiO2/TiO2-x 박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
Han-Sang Kim, Sung-Jin Kim
김한상, 김성진
Korean J. Met. Mater. 2019;57(2):84-90.   Published online 2019 Feb 5
DOI: https://doi.org/10.3365/KJMM.2019.57.2.84

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

                        
Study of Solution-Processed Indium Zinc Oxide TFTs Made by Simultaneous Spin Coating and Ultraviolet Light Irradiation
스핀코팅과 자외선 조사의 동시 적용을 기반한 용액 공정형 Indium Zinc 산화물 트랜지스터 연구
Fei Shan, Sung-Jin Kim
선비, 김성진
Korean J. Met. Mater. 2017;55(8):572-575.   Published online 2017 Aug 1
DOI: https://doi.org/10.3365/KJMM.2017.55.8.572

Abstract
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for..... More

      
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