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Calculated Electric Transport Properties of Thermoelectric Semiconductors Under Different Carrier Scattering Mechanisms
캐리어 산란 메커니즘에 따른 열전반도체의 이론 전자수송 특성 변화
Sang-il Kim, Hyun-Sik Kim
김상일, 김현식
Korean J. Met. Mater. ;59(2):127-134.   Published online 2021 Jan 27
DOI: https://doi.org/10.3365/KJMM.2021.59.2.127

The widespread application of thermoelectric devices in cooling and waste heat recovery systems will be achieved when materials achieve high thermoelectric performance. However, improving thermoelectric performance is not straightforward because the Seebeck coefficient and electrical conductivity of the materials have opposite trends with varying carrier concentration. Here, we demonstrate that..... More

Impact of Fermi Surface Shape Engineering on Calculated Electronic Transport Properties of Bi-Sb-Te
페르미 면 형상제어에 따른 Bi-Sb-Te 이론 전자수송 특성 변화
Sang-il Kim, Jong-Chan Lim, Heesun Yang, Hyun-Sik Kim
김상일, 임종찬, 양희선, 김현식
Korean J. Met. Mater. 2021;59(1):54-60.   Published online 2021 Jan 5
DOI: https://doi.org/10.3365/KJMM.2021.59.1.54

Using thermoelectric refrigerators can address climate change because they do not utilize harmful greenhouse gases as refrigerants. To compete with current vapor compression cycle refrigerators, the thermoelectric performance of materials needs to be improved. However, improving thermoelectric performance is challenging because of the trade-off relationship between the Seebeck coefficient and..... More

Influence of Te Vacancies on the Thermoelectric Properties of n-type Cu0.008Bi2Te2.7-xSe0.3
n-type Cu0.008Bi2Te2.7-xSe0.3 열전 합금에서 Te 공공 형성에 의한 열전 성능 연구
Yerim Yang, TaeWan Kim, Seokown Hong, Jiwoo An, Sang-il Kim
양예림, 김태완, 홍석원, 안지우, 김상일
Korean J. Met. Mater. 2020;58(10):721-727.   Published online 2020 Oct 5
DOI: https://doi.org/10.3365/KJMM.2020.58.10.721

In this study, we report the influence of Te vacancy formation on the thermoelectric properties of n-type Cu0.008Bi2Te2.7Se0.3 alloys, including their electronic and thermal transport properties. Te-deficient Cu0.008Bi2Te2.7-xSe0.3 (x = 0, 0.005, 0.01 and 0.02) samples were systematically synthesized and characterized. Regarding electronic transport properties, carrier concentration was increased with..... More

Influence of Cu Doping on Bipolar Conduction Suppression for p-type Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 Alloys
Cu 첨가에 따른 p-type Bi0.5Sb1.5Te3 및 Bi0.4Sb1.6Te3 합금의 양극성 전도 저감 효과
Hyun-Jun Cho, Hyun-Sik Kim, Woong-hee Sohn, Sang-il Kim
조현준, 김현식, 손웅희, 김상일
Korean J. Met. Mater. 2020;58(6):439-445.   Published online 2020 May 21
DOI: https://doi.org/10.3365/KJMM.2020.58.6.439

In this study, we report how Cu doping can modify the thermoelectric performance of p-type Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 thermoelectric alloys, including their electronic and thermal transport properties. For electronic transport, the power factors of both Bi0.5Sb1.5Te3 and Bi0.4Sb1.6Te3 compositions were increased by Cu doping. The origins of the enhanced power..... More

Enhanced Thermoelectric Transport Properties of n-type InSe by Sn doping
Sung-sil Choo, Seok-won Hong, Hyun-Sik Kim, Sang-il Kim
Korean J. Met. Mater. 2020;58(5):348-352.   Published online 2020 Apr 20
DOI: https://doi.org/10.3365/KJMM.2020.58.5.348

Layered post transition metal chalcogenides such as SnSe, SnSe2, In2Se3, and In4Se3 have attracted attention as promising thermoelectric materials due to their intrinsically low lattice thermal conductivities. Recently, n-type indium selenide (InSe) based materials have also been suggested as good candidates for thermoelectric materials by optimizing their electrical properties, i.e.,..... More

Effect of Cu/In Doping on the Thermoelectric Transport Properties of Bi-Sb-Te Alloys
Bi-Sb-Te계 합금의 열전물성에 대한 Cu 및 In 첨가 영향
Hyun Jun Cho, Hyun-Sik Kim, Sang-Il Kim
조현준, 김현식, 김상일
Korean J. Met. Mater. 2019;57(10):673-678.   Published online 2019 Sep 23
DOI: https://doi.org/10.3365/KJMM.2019.57.10.673

Herein we report the effect of Cu/In doping on the electronic and thermal transport properties of Bi-Sb-Te thermoelectric alloys. To closely examine the role of each doping element when incorporated in a Bi0.4Sb1.6Te3 alloy, different groups of samples were prepared and characterized, including undoped Bi0.4Sb1.6Te3, In single-doped samples and In..... More

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