Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO_2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO_2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More