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Influence of Film Thickness on the Electrical and Optical Properties of ZnO/Ag/SnO<sub>2</sub> Tri-Layer Films
ZnO/Ag/SnO2 적층박막의 두께 변화에 따른 전기적, 광학적 특성 연구
Yu-Sung Kim, Jin-Young Choi, Yun-Je Park, Su-Hyeon Choe, Young-Min Kong, Daeil Kim
김유성, 최진영, 박윤제, 최수현, 공영민, 김대일
Korean J. Met. Mater. 2019;57(5):324-327.   Published online 2019 May 5
DOI: https://doi.org/10.3365/KJMM.2019.57.5.324

Abstract
ZnO/Ag/SnO2 (ZAS) tri-layer films were prepared on glass substrates via RF and DC magnetron sputtering, and then the influence of the thickness of the ZnO and SnO2 layers on the optical and electrical properties of the ZAS films was investigated. As deposited ZnO 50 nm/Ag 10 nm/SnO2 50 nm films..... More

                        
Optimization of ZnO/Ag/ZnO Transparent Conductive Electrodes Fabricated by Magnetron Sputtering
스퍼터링법으로 증착된 ZnO/Ag/ZnO 투명전극의 성능 최적화 연구
Woo Hyeon Jo, Dooho Choi
조우현, 최두호
Korean J. Met. Mater. 2019;57(2):91-96.   Published online 2019 Jan 11
DOI: https://doi.org/10.3365/KJMM.2019.57.2.91

Abstract
The critical role of the thicknesses of the top and bottom oxide layers, as well as Ag layer, in ZnO/Ag/ZnO transparent conductive electrodes were investigated. The Ag forms a nearly continuous layer at the thickness of 8 nm, at which the Ag sheet resistance of 8.0 Ω/Sq. is lower than..... More

                           Cited By 1
Influence of the Thickness of TiO<sub>2</sub>/TiO<sub>2-x</sub> Layers on the Behavior of a Memristor Device
TiO2/TiO2-x 박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
Han-Sang Kim, Sung-Jin Kim
김한상, 김성진
Korean J. Met. Mater. 2019;57(2):84-90.   Published online 2019 Feb 5
DOI: https://doi.org/10.3365/KJMM.2019.57.2.84

Abstract
Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

                           Cited By 1
Enhanced Electrical Properties and Stability of Solution-processed Amorphous Oxide Thin Film Transistors with Multi-active Layers
Won Seok Choi, Byung Jun Jung, Myoung Seok Kwon
Korean J. Met. Mater. 2018;56(4):304-312.   Published online 2018 Apr 5
DOI: https://doi.org/10.3365/KJMM.2018.56.4.304

Abstract
We investigated the electrical properties and gate bias stress stability of solution-processed amorphous oxide thin film transistors (TFTs) with multi-stacked active layers. With the multi-layered InZnO (In:Zn = 1:1), mobility was increased from 4.6 to 21.2 cm2V-1s-1 and the subthreshold swing (SS) was improved from 0.71 to 0.54 V/decade compared..... More

      
High-temperature Corrosion of CrAlSiN Thin Films in N<sub>2</sub>/0.1%H2S Gas
Muhammad Ali Abro, Junhee Hahn, Dong Bok Lee
Korean J. Met. Mater. 2018;56(4):272-279.   Published online 2018 Apr 5
DOI: https://doi.org/10.3365/KJMM.2018.56.4.272

Abstract
Cr25.2Al19.5Si4.7N50.5 thin films were deposited on steel substrates by cathodic arc plasma deposition. They consisted of alternating fcc-Cr(Al)N/hcp-Al(Cr,Si)N nanolayers. They were corroded at 900 and 1000 oC for 5-100 h in N2/0.1%H2S gas atmosphere. Their corrosion mechanism, the structure of the formed scales, and the role of film-constituting elements during..... More

      
Characteristics of Al Alloy Powders Prepared by Gas Atomized Method Using Pulsed Current Sintered-Body Process
가스분무법으로 제조된 Al 합금분말의 펄스통전 소결체의 특성평가
Hyun-Kuk Park, Jun-Ho Jang, Jung-Han Lee, Ik-Hyun Oh
박현국, 장준호, 이정한, 오익현
Korean J. Met. Mater. 2017;55(10):703-709.   Published online 2017 Sep 28
DOI: https://doi.org/10.3365/KJMM.2017.55.10.703

Abstract
In this study, Al alloy targets were fabricated using the powder metallurgy (pulsed current activated sintering, PCAS) process for metal PVD coating target applications. Powders were prepared from Al, Si and Cu ingots for sintering Al alloy compacts using the gas atomizing process. To fabricate the gas atomized Al alloy..... More

      
Study of Solution-Processed Indium Zinc Oxide TFTs Made by Simultaneous Spin Coating and Ultraviolet Light Irradiation
스핀코팅과 자외선 조사의 동시 적용을 기반한 용액 공정형 Indium Zinc 산화물 트랜지스터 연구
Fei Shan, Sung-Jin Kim
선비, 김성진
Korean J. Met. Mater. 2017;55(8):572-575.   Published online 2017 Aug 1
DOI: https://doi.org/10.3365/KJMM.2017.55.8.572

Abstract
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for..... More

      
High-temperature Corrosion of AlCrTiSiN Film in Ar-1%SO<sub>2</sub> Gas
Poonam Yadav, Sik Chol Kwon, Yue Lin, Shihong Zhang, Dong Bok Lee
Korean J. Met. Mater. 2017;55(4):222-226.   Published online 2017 Apr 6
DOI: https://doi.org/10.3365/KJMM.2017.55.4.222

Abstract
An AlCrTiSiN film composed of 31Al-15Cr-1.7Ti-0.5Si-51.8N (at%) was deposited on a steel substrate by arc ion plating to a thickness of 1 μm. It consisted of nano crystalline hcp-AlN and fcc-CrN. Its corrosion behavior in Ar-1%SO2 gas at 800 ℃ for 5-50 h was studied. The resulting scales consisted primarily..... More

      
Enhancement of the Opto-Electrical Properties of Ag Intermediate ZTO Films by Vacuum Annealing
Hyun-Joo Moon, Daeil Kim
Korean J. Met. Mater. 2017;55(3):209-212.   Published online 2017 Mar 3
DOI: https://doi.org/10.3365/KJMM.2017.55.3.209

Abstract
Sn-doped ZnO (ZTO)/Ag/ZTO tri-layer films were deposited on glass substrates by radio frequency (RF) and direct current (DC) magnetron sputtering and then vacuum annealed at 100, 200 and 300 ℃ for 30 min with a proportions of H2/N2 gas flow of 6/6 sccm, to investigate the effects of annealing temperature..... More

      
Study of Novel EUV AbsorberNickel & Nickel Oxide
새로운 EUV 흡수체 연구:니켈 & 니켈 산화물
Dong Gon Woo, Jung Hwan Kim, Jung Sik Kim, Seongchul Hong, Jinho Ahn
우동곤, 김정환, 김정식, 홍성철, 안진호
Korean J. Met. Mater. 2017;55(3):198-201.   Published online 2017 Mar 3
DOI: https://doi.org/10.3365/KJMM.2017.55.3.198
Abstract
The shadowing effect is one of the most urgent issues yet to be solved in high-volume manufacturing using extreme ultraviolet lithography (EUVL). Many studies have been conducted to mitigate the unexpected results caused by shadowing effects. The simplest way to mitigate the shadowing effect is to reduce the thickness of... More
         Cited By 1
Material Analysis & Characterization
Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate
Byunggu Kim, Jae-Young Leem
Korean J. Met. Mater. 2017;55(1):67-71.   Published online 2017 Jan 5
DOI: https://doi.org/10.3365/KJMM.2017.55.1.67

Abstract
ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for..... More

         Cited By 1
Effect of Post-Deposition Annealing on the Structural, Optical and Electrical Properties of Ti-doped Indium Oxide Thin Films
Sung-Bo Heo, Hyun-Joo Moon, Jeong-Hyeon Oh, Young-Hwan Song, Tae-Young Eom, Jun-Ho Kim, Daeil Kim
Korean J. Met. Mater. 2016;54(10):775-779.   Published online 2016 Oct 5
DOI: https://doi.org/10.3365/KJMM.2016.54.10.775

Abstract
Ti-doped In2O3 (TIO) thin films were deposited on glass substrates by RF magnetron sputtering. The films were then annealed at 100, 200 or 300 °C for 30 min to investigate the effects of the annealing temperature on the films’ structural, electrical and optical properties. The films annealed at 200 °C..... More

      
Optical Devices & Energy Materials
Synthesis and Photoluminescence Studies of ZnO Films Using Vapor Phase Transport Combined With Rapid Heating
Iksoo Ji, Jae-Young Leem
Korean J. Met. Mater. 2016;54(8):609-614.   Published online 2016 Aug 5
DOI: https://doi.org/10.3365/KJMM.2016.54.8.609

Abstract
The vapor phase transport (VPT) process is usually used for the growth of one-dimensional nanostructures rather than for film deposition. In this study, for the first time, we report on the fabrication and optical propeties of ZnO film produced by VPT combined with rapid heating. The X-ray diffraction results showed..... More

      
Electronic Materials
Enhanced Optical and Electrical Properties of TiO<sub>2</sub> Buffered IGZO/TiO<sub>2</sub> Bi-Layered Films
Hyun-Joo Moon, Daeil Kim
Korean J. Met. Mater. 2016;54(8):605-608.   Published online 2016 Aug 5
DOI: https://doi.org/10.3365/KJMM.2016.54.8.605

Abstract
In and Ga doped ZnO (IGZO, 100-nm thick) thin films were deposited by radio frequency magnetron sputtering without intentional substrate heating on a bare glass substrate and a TiO2-deposited glass substrate to determine the effect of the thickness of a thin TiO2 buffer layer on the structural, optical, and electrical..... More

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