Abstract
This research explores how aggregation influences the electrical behavior at both the planar - heterojunction poly(3-hexylthiophene) (P3HT)/SiO2 and P3HT/ZnO nanocrystal (NC) interfaces. The formation of H- and J-type aggregates leads to distinct molecular ordering and packing structures, manifesting as changes in threshold voltage shifts (electrical gating) as well as absorption..... More

Abstract
Vacuum-processed oxide semiconductors have enabled incredible recent advances in the scientific research of metal oxide thin-film transistors (TFTs) and their introduction in commercial displays. Developing metal oxide transistors with low processing temperatures, on the other hand, remains a challenge. Metal oxide transistors are commonly produced at high processing temperatures (over..... More