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Thermal-Cycling-Induced Si<sub>3</sub>N<sub>4</sub> Damage in Semiconductor Devices Assembled Utilizing a Lead-on-Chip Package
리드-온-칩 패키지 기술로 조립된 반도체 디바이스에서 온도변화에 의해 발생되는 Si3N4 손상
Seong-Min Lee, Yeon-Wook Kim
이성민, 김연욱
Korean J. Met. Mater. 2023;61(2):76-83.   Published online 2023 Jan 27
DOI: https://doi.org/10.3365/KJMM.2023.61.2.76

Abstract
This article shows how fractures in the Si3N4 layer, which comprises the top layer of semiconductor devices encapsulated utilizing a lead-on-chip (LOC) packaging technique, are influenced by changes in the lead-frame materials and thermal-cycling test conditions. Using thermal-cycling tests, it was found that fractures in the Si 3 N 4..... More

                
Cleavage Dicing Mechanics in Silicon Wafers
실리콘 웨이퍼의 그리비지 다이싱 역학
Seong-Min Lee, Yeon-Wook Kim
이성민, 김연욱
Korean J. Met. Mater. 2019;57(11):689-694.   Published online 2019 Nov 5
DOI: https://doi.org/10.3365/KJMM.2019.57.11.689

Abstract
This article details how effectively dicing damage of silicon wafers can be mechanically minimized by appropriate laser-induced groove formation prior to wafer separation. Various laser dicing factors, such as the laser-control power, the scan rate and the scan number of the laser beam, were estimated to determine the optimum groove..... More

                   Web of Science 2  Crossref 1
Electronic Materials
Effect of Sawing Velocity Variation on Chipping Damage of Semiconductor Wafers with Different Thicknesses
다이싱 속도 변화가 두께가 차별화된 반도체 웨이퍼의 칩핑 손상에 미치는 영향
Seong-Min Lee
이성민
Korean J. Met. Mater. 2016;54(8):598-604.   Published online 2016 Aug 5
DOI: https://doi.org/10.3365/KJMM.2016.54.8.598

Abstract
This work details how the sawing velocity influences the chipping damage of semiconductor wafers with different thicknesses during wafer separation. The experimental result shows that at a sawing velocity higher than 60000 rpm, in thinner wafers the magnitude of chipping damage more strongly depends on the revolving velocity of the..... More

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