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Effect of Rapid Thermal Annealing Temperature on Oxygen-Deficient TiO<sub>2-x</sub>-based Thin-Film Transistors Deposited by RF Magnetron Sputtering
RF 마그네트론 스퍼터링으로 증착한 산소 결핍 구조 TiO2-x 박막 트랜지스터에 미치는 급속 열처리 온도의 영향
Han-Sang Kim, Jae-Yun Lee, Sung-Jin Kim
김한상, 이재윤, 김성진
Korean J. Met. Mater. 2019;57(7):438-446.   Published online 2019 Jun 5
DOI: https://doi.org/10.3365/KJMM.2019.57.7.438

Abstract
We investigated the effect of rapid thermal annealing (RTA) temperature report on oxygendeficient rutile TiO2-x thin-film transistors deposited by RF magnetron sputtering. Amorphous TFTs that use TiO2-x semiconductors as an active layer can be fabricated by low-temperature process and show remarkable electrical performance. The RTA post-annealing process provides greater production..... More

                        
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