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Effects of Post-annealing Condition on Interfacial Reaction and Bonding Strength of Cu/Sn-3.0Ag-0.5Cu/Al Joint for Heat Dissipation Module Application
방열 모듈 적용을 위한 Cu/Sn-3.0Ag-0.5Cu/Al 접합부의 계면 반응 및 접합강도에 미치는 후속 열처리 영향 분석
Dong Ik Jeong, Gahui Kim, Doheon Kim, Minchul Oh, Geon-Hong Kim, Young-Bae Park
정동익, 김가희, 김도헌, 오민철, 김건홍, 박영배
Korean J. Met. Mater. 2024;62(4):312-322.   Published online 2024 Mar 28
DOI: https://doi.org/10.3365/KJMM.2024.62.4.312

The effects of post-annealing times at 150°C on the bonding strength and interfacial characteristics of Cu/Sn-3.0Ag-0.5Cu (SAC305)/Al were systematically evaluated. In the as-bonded sample, Cu6Sn5 intermetallic compound (IMC) was formed at the upper Cu/SAC305 interface, while Ag3Al IMC was formed at the lower SAC305/Al interface, and a black layer of..... More

Improvement of Device Characteristics of Low Temperature IGZO Thin-film Transistors through Laser Post Annealing
레이저 후열처리 공정을 통한 저온공정형 IGZO 박막 트랜지스터의 특성 개선에 관한 연구
Jae-Yun Lee, Anvar Tukhtaev, Suchang Yoo, Yong-Hwan Kim, Seong-Gon Choi, Heung Gyoon Ryu, Yong Jin Jeong, Sung-Jin Kim
이재윤, Anvar Tukhtaev, 유수창, 김용환, 최성곤, 유흥균, 정용진, 김성진
Korean J. Met. Mater. 2022;60(8):557-563.   Published online 2022 Jul 12
DOI: https://doi.org/10.3365/KJMM.2022.60.8.557

High-performance thin-film transistors (TFTs) produced at low temperatures are required for ultrahigh- resolution and flexible display applications. The scientific community has been studying unconventional techniques to investigate low voltage flexible devices and low power flexible circuits for the past decade. In particular, metal oxide semiconductors, such as indium gallium zinc..... More

                   Web of Science 1  Crossref 1
The Effect of Post Annealing on Physical Properties of NiTe<sub>2</sub> Thin Film Fabricated by Magnetron Sputtering
후열처리 공정이 스퍼터링법으로 제조된 NiTe2 박막의 물리적 성질에 미치는 영향
Ho Jun Park, Jun Ho Lee, Byeong Uk Min, Suk Jun Kim
박호준, 이준호, 민병욱, 김석준
Korean J. Met. Mater. 2020;58(3):195-200.   Published online 2020 Mar 5
DOI: https://doi.org/10.3365/KJMM.2020.58.3.195

In this study, the effect of post annealing time on the physical properties of NiTe2 thin films with 2D structure deposited by co-sputtering was investigated. After heat treatment for 10 min, nickel ditelluride thin films with a composition of Ni : Te = 1 : 2 exhibited transmittance of 46%..... More

                   Web of Science 3  Crossref 3
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