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Improving the Electrical Properties of Zinc-Tin Oxide Thin-Film Transistors by Additive using Electrohydrodynamic Jet Technology
전기수력학 젯 기술을 이용한 아연-주석 산화물 박막트랜지스터에서 첨가제에 의한 전기적 특성 향상
Woon-Seop Choi, Young Jik Lee, Yong Jae Kim
최운섭, 이영직, 김용재
Korean J. Met. Mater. 2023;61(8):589-593.   Published online 2023 Jul 24
DOI: https://doi.org/10.3365/KJMM.2023.61.8.589

Abstract
Oxide thin-film transistors (TFTs) are important semiconductor materials for display backplanes. To fabricate flexible displays, not only display modes but also TFTs are important. Flexible TFTs are especially needed for flexible displays, and related processes need to be developed. Printing is a good choice for the new fabrication of oxide..... More

                
Preparation of Li-Doped Indium-Zinc Oxide Thin-Film Transistor at Relatively Low Temperature Using Inkjet Printing Technology
잉크젯 인쇄 기술을 이용하여 상대적으로 낮은 온도에서 리튬이 도핑 된 인듐-아연-산화물 트랜지스터의 제작
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2021;59(5):314-320.   Published online 2021 Apr 6
DOI: https://doi.org/10.3365/KJMM.2021.59.5.314

Abstract
Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs)...... More

                   Web of Science 4  Crossref 4
Study of Solution-Processed Indium Zinc Oxide TFTs Made by Simultaneous Spin Coating and Ultraviolet Light Irradiation
스핀코팅과 자외선 조사의 동시 적용을 기반한 용액 공정형 Indium Zinc 산화물 트랜지스터 연구
Fei Shan, Sung-Jin Kim
선비, 김성진
Korean J. Met. Mater. 2017;55(8):572-575.   Published online 2017 Aug 1
DOI: https://doi.org/10.3365/KJMM.2017.55.8.572

Abstract
We investigated solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs) which were fabricated by spin coating with simultaneous irradiation by ultraviolet light. The proposed treatment enhanced the efficient condensation and densification of the oxide semiconducting channel layer by decreasing oxygen-vacancy-related defects and increasing metal-oxide bonds. An IZO TFT irradiated for..... More

    
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