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Effects of Rapid Thermal Annealing on the Structural, Optical, and Electrical Properties of ZnO/Ag/SnO<sub>2</sub> Tri-Layer Films
Su-Hyeon Choe, Yu-Sung Kim, Jin-Young Choi, Yun-Je Park, Byung-Chul Cha, Young-Min Kong, Daeil Kim
Korean J. Met. Mater. 2019;57(8):506-509.   Published online 2019 Aug 5
DOI: https://doi.org/10.3365/KJMM.2019.57.8.506

ZnO 50 nm/Ag 10 nm/SnO2 50 nm (ZAS) tri-layer films were deposited on a glass substrate by RF and DC magnetron sputtering and then underwent rapid thermal annealing in a low vacuum of 1×10-3 Torr to investigate the effects of post-deposition annealing on the optical and electrical properties of the..... More

Effect of Process Parameters on the Angular Distribution of Sputtered Cu Flux in Long-Throw Sputtering System
Hee-Young Shin, Tae-Ho Kim, Jun-Woo Park, Hyun-Chul Sohn
Korean J. Met. Mater. 2019;57(7):462-467.   Published online 2019 Jun 5
DOI: https://doi.org/10.3365/KJMM.2019.57.7.462

In this work, the angular distribution of the sputtered Cu flux in a long throw sputtering (LTS) system is extracted from the comparison of experimentally-measured profiles of deposited films with simulated profiles of films in overhang contact structure. And effects of the sputtering process parameters such as Ar pressure during..... More

Influence of the Thickness of TiO<sub>2</sub>/TiO<sub>2-x</sub> Layers on the Behavior of a Memristor Device
TiO2/TiO2-x 박막층의 두께가 멤리스터 소자의 특성에 미치는 영향
Han-Sang Kim, Sung-Jin Kim
김한상, 김성진
Korean J. Met. Mater. 2019;57(2):84-90.   Published online 2019 Feb 5
DOI: https://doi.org/10.3365/KJMM.2019.57.2.84

Memristors have been extensively investigated as the fourth fundamental circuit element. Titanium oxide is a common material used to fabricate memristors. In this paper, we investigated the influence of the thickness of the oxide active layer on the Al/TiO2-x/TiO2/heavily doped electrode memristor architecture. An insulating TiO2 thin-film was deposited using..... More

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