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Preparation of Li-Doped Indium-Zinc Oxide Thin-Film Transistor at Relatively Low Temperature Using Inkjet Printing Technology
잉크젯 인쇄 기술을 이용하여 상대적으로 낮은 온도에서 리튬이 도핑 된 인듐-아연-산화물 트랜지스터의 제작
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2021;59(5):314-320.   Published online 2021 Apr 6
DOI: https://doi.org/10.3365/KJMM.2021.59.5.314

Abstract
Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs)...... More

                   Web of Science 4  Crossref 4
Effect of Zn Doping on an Inkjet-Printed Metal Oxide Thin-Film Transistor at Low Temperature of 200 <sup>o</sup>C
저온 200 oC에서 잉크젯인쇄에 의한 금속산화물 박막트랜지스터의 아연도핑 효과
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2019;57(3):170-175.   Published online 2019 Feb 8
DOI: https://doi.org/10.3365/KJMM.2019.57.3.170

Abstract
Amorphous oxide semiconductors have attracted much attention due to their good electrical properties with wide band gaps and low cost process, which are used as backplanes for displays. However, there are some issues regarding low temperature process with high mobility and printing capability. The inkjet method is an attractive technology..... More

                   Web of Science 4  Crossref 2
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