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Effect of Cu/In Doping on the Thermoelectric Transport Properties of Bi-Sb-Te Alloys
Bi-Sb-Te계 합금의 열전물성에 대한 Cu 및 In 첨가 영향
Hyun Jun Cho, Hyun-Sik Kim, Sang-Il Kim
조현준, 김현식, 김상일
Korean J. Met. Mater. 2019;57(10):673-678.   Published online 2019 Sep 23
DOI: https://doi.org/10.3365/KJMM.2019.57.10.673

Abstract
Herein we report the effect of Cu/In doping on the electronic and thermal transport properties of Bi-Sb-Te thermoelectric alloys. To closely examine the role of each doping element when incorporated in a Bi0.4Sb1.6Te3 alloy, different groups of samples were prepared and characterized, including undoped Bi0.4Sb1.6Te3, In single-doped samples and In..... More

                        
Electronic Transport and Thermoelectric Properties of Cu<sub>12-x</sub>Zn<sub>x</sub>Sb<sub>4</sub>S<sub>13</sub> Tetrahedrites Prepared by Mechanical Alloying and Hot Pressing
Sung-Gyu Kwak, Go-Eun Lee, Il-Ho Kim
Korean J. Met. Mater. 2019;57(5):328-333.   Published online 2019 Apr 10
DOI: https://doi.org/10.3365/KJMM.2019.57.5.328

Abstract
Tetrahedrite Cu12Sb4S13 has low lattice thermal conductivity because of the lone-pair electrons of Sb, which cause the Cu atoms to vibrate at a low frequency and high amplitude. When the Cu atoms of Cu12Sb4S13 are partially substituted with a transition metal, changes in the Cu vibrations can intensify phonon scattering,..... More

                        
Thermoelectric Properties of MnSi1.74-1.75:Ge<i>m</i> Prepared by Solid-State Reaction and Hot Pressing
In-Jae Lee, Sol-Bin Park, Soon-Chul Ur, Kyung-Wook Jang, Il-Ho Kim
Korean J. Met. Mater. 2019;57(4):264-269.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.264

Abstract
Higher manganese silicides (HMSs) MnSi1.74-1.75:Gem (m = 0.01–0.04) were prepared by solid-state reaction and hot pressing. The major phases of the HMSs were Mn27Si47 or Mn4Si7, and a small quantity of Si remained, but the intermetallic compound MnSi was not formed. The lattice constant increased with the substitution of Ge..... More

                        
Doping Effect of Indium on Zinc-tin Oxide Thin-Film Transistor Using Electrohydrodynamic Jet Spray Technology
전기수력학젯 분산 기술을 이용한 아연-주석 산화물 박막트랜지스터의 인듐 도핑 효과
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2019;57(4):258-263.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.258

Abstract
The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV,..... More

                        
Effect of Zn Doping on an Inkjet-Printed Metal Oxide Thin-Film Transistor at Low Temperature of 200 <sup>o</sup>C
저온 200 oC에서 잉크젯인쇄에 의한 금속산화물 박막트랜지스터의 아연도핑 효과
Woon-Seop Choi
최운섭
Korean J. Met. Mater. 2019;57(3):170-175.   Published online 2019 Feb 8
DOI: https://doi.org/10.3365/KJMM.2019.57.3.170

Abstract
Amorphous oxide semiconductors have attracted much attention due to their good electrical properties with wide band gaps and low cost process, which are used as backplanes for displays. However, there are some issues regarding low temperature process with high mobility and printing capability. The inkjet method is an attractive technology..... More

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