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Thermoelectric Properties of MnSi1.74-1.75:Ge<i>m</i> Prepared by Solid-State Reaction and Hot Pressing
In-Jae Lee, Sol-Bin Park, Soon-Chul Ur, Kyung-Wook Jang, Il-Ho Kim
Korean J. Met. Mater. 2019;57(4):264-269.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.264

Higher manganese silicides (HMSs) MnSi1.74-1.75:Gem (m = 0.01–0.04) were prepared by solid-state reaction and hot pressing. The major phases of the HMSs were Mn27Si47 or Mn4Si7, and a small quantity of Si remained, but the intermetallic compound MnSi was not formed. The lattice constant increased with the substitution of Ge..... More

Doping Effect of Indium on Zinc-tin Oxide Thin-Film Transistor Using Electrohydrodynamic Jet Spray Technology
전기수력학젯 분산 기술을 이용한 아연-주석 산화물 박막트랜지스터의 인듐 도핑 효과
Woon-Seop Choi
Korean J. Met. Mater. 2019;57(4):258-263.   Published online 2019 Apr 5
DOI: https://doi.org/10.3365/KJMM.2019.57.4.258

The effect of indium doping on zinc-tin oxide thin-film transistor was investigated using electrohydrodynamic (EHD) jet spray technology. EHD jet spray is a new and unique drop-on-demand patterning technology for printed electronics. After optimizing process parameters, the EHD jet spraying conditions were determined to be a voltage of 4.5 kV,..... More

Effect of Zn Doping on an Inkjet-Printed Metal Oxide Thin-Film Transistor at Low Temperature of 200 <sup>o</sup>C
저온 200 oC에서 잉크젯인쇄에 의한 금속산화물 박막트랜지스터의 아연도핑 효과
Woon-Seop Choi
Korean J. Met. Mater. 2019;57(3):170-175.   Published online 2019 Feb 8
DOI: https://doi.org/10.3365/KJMM.2019.57.3.170

Amorphous oxide semiconductors have attracted much attention due to their good electrical properties with wide band gaps and low cost process, which are used as backplanes for displays. However, there are some issues regarding low temperature process with high mobility and printing capability. The inkjet method is an attractive technology..... More

                           Cited By 1
Electronic Transport and Thermoelectric Properties of Cu12-xZnxSb4S13 Tetrahedrites Prepared by Mechanical Alloying and Hot Pressing
Sung-Gyu Kwak, Go-Eun Lee, and Il-Ho Kim

Received 2019 Feb 27     Accepted 2019 Mar 21     Published online 2019 Apr 10
Tetrahedrite Cu12Sb4S13 has low lattice thermal conductivity because of the lone-pair electrons of Sb, which cause the Cu atoms to vibrate at a low frequency and high amplitude. When the Cu atoms of Cu12Sb4S13 are partially substituted with a transition metal, changes in the Cu vibrations can intensify phonon scattering,... More
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