Abstract
To ensure the high-temperature stability of a bondline under next-generation power devices such as SiC semiconductors, a die bonding test was performed by transient liquid-phase (TLP) sinter-bonding using a Sn-coated Cu (Cu@Sn) particle-based preform. Compared to the existing 20 min-bonding result using a 30 μm Cu@Sn particle-based preform, a 5..... More