Abstract
In this study, ultrathin (4-40 nm) Cu-layer-based transparent heaters prepared on glass substrates were investigated for cost-effective applications. The Cu heaters were embedded between ZnO layers serving as anti-reflection and anti-corrosion layers. The Cu layer thicknesses varied in the range of 4-40 nm, and the corresponding structural, electrical, optical and..... More

Abstract
In this study, we prepared highly thermostable semi-transparent heaters composed of W layers with thicknesses of 1-20 nm, on which a 30 nm-thick ZnO layer was deposited to serve as an anti-oxidation barrier. The optical transmittance and sheet resistance of the heaters could be greatly modulated by varying the W..... More

Abstract
In this study, we report a methodology that simultaneously improved the corrosion resistance and visible transparency of ZnO/Cu/ZnO transparent heaters with the addition of reactively sputtered Al₂O₃ layers. To assess corrosion resistance, ZnO and Al₂O₃ layers with thicknesses in the range of 0-20 nm were deposited onto 20 nm-thick Cu..... More

Abstract
In this study, the critical role of substrate bias during the sputter deposition of Al thin films is discussed. Two sets of Al thin films having a nominal thickness of 300 nm were deposited at sputtering pressures of 4.1 and 1.5 mTorr, respectively, with an applied negative substrate bias in..... More

Abstract
With the expanding development of flexible optoelectronic devices, the need for high-performance (i.e., high conductivity, high transmittance and flexibility) transparent conductive electrodes has grown. In this study, the critical role of thickness for each of the layers in ZnO/Cu/ZnO transparent conductive electrodes (TCE) for optoelectronic devices has been investigated. The..... More

Abstract
The critical role of the thicknesses of the top and bottom oxide layers, as well as Ag layer, in ZnO/Ag/ZnO transparent conductive electrodes were investigated. The Ag forms a nearly continuous layer at the thickness of 8 nm, at which the Ag sheet resistance of 8.0 Ω/Sq. is lower than..... More

Abstract
Severe resistivity size effect in Cu interconnects is attributed to the relatively long bulk electron mean free path (39 nm at 298 K), which is inherently determined by phonon scattering. In this regard, Ru and Co have been recently considered as attractive alternatives for next-generation interconnect materials because the significantly..... More