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Dooho Choi 1 Article
605 Potential of Ruthenium and Cobalt as Next-generation Semiconductor Interconnects
Ru와 Co의 차세대 반도체 배선 적용성 연구
Dooho Choi
최두호
Korean J. Met. Mater. 2018;56(8):605-610.   Published online 2018 Aug 5
DOI: https://doi.org/10.3365/KJMM.2018.56.8.605

Abstract
Severe resistivity size effect in Cu interconnects is attributed to the relatively long bulk electron mean free path (39 nm at 298 K), which is inherently determined by phonon scattering. In this regard, Ru and Co have been recently considered as attractive alternatives for next-generation interconnect materials because the significantly..... More

                        
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