Abstract
We investigated the electrical properties and gate bias stress stability of solution-processed amorphous oxide thin film transistors (TFTs) with multi-stacked active layers. With the multi-layered InZnO (In:Zn = 1:1), mobility was increased from 4.6 to 21.2 cm²V^-1s^-1 and the subthreshold swing (SS) was improved from 0.71 to 0.54 V/decade compared..... More